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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD907 DESCRIPTION *High Collector Current *Good Linearity of hFE *High Reliability *Wide Area of Safe Operation APPLICATIONS *Audio amplifier *Series regulators *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range ww w scs .i VALUE 80 UNIT V 80 7 V V 10 1.5 80 150 A A W .cn mi e PC TJ Tstg -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.56 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 0.1mA; IE= 0 IE= 0.1mA; IC= 0 IC= 5A; IB= 0.5A B 2SD907 MIN 80 80 7 TYP. MAX UNIT V V V 1.2 2.0 V V mA mA IC= 5A; IB= 0.5A B VCB= 80V; IE= 0 Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w. w sem isc VEB= 7V; IC= 0 IC= 2A; VCE= 5V IC= 5A; IB1= -IB2= 0.5A RL= 5; PW=20s; Duty Cycle2% .cn i 40 0.1 0.1 1.0 2.0 1.0 s s s isc Websitewww.iscsemi.cn 2 |
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